Gate Oxide Dependent Subthreshold Current of Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Modelling of Parasitic Capacitances for Single-gate, Double-gate and Independent Double-gate MOSFET
This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...
متن کاملStructure-Dependent Subthreshold Swings for Double-gate MOSFETs
583 Abstract— In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L g is varied from 30nm to 100...
متن کاملPerformance of Double Gate SOI MOSFET
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
متن کاملSymmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
متن کاملComparison study of Drain Current, Subthreshold Swing and DIBL of III-V Heterostructure and Silicon Double Gate MOSFET
We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2014
ISSN: 2234-4772
DOI: 10.6109/jkiice.2014.18.2.425